InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter

作     者：ANNA KAFAR SZYMON STANCZYK MARCIN SARZYNSKI SZYMON GRZANKA JAKUB GOSS IRINA MAKAROWA ANNA NOWAKOWSKA-SIWINSKA TADEK SUSKI PIOTR PERLIN 

作者机构：Institute of High Pressure Physics Polish Academy of Sciences TopGaN Ltd. 

出 版 物：《Photonics Research》 (光子学研究（英文版）)

年 卷 期：2017年第5卷第2期

页      面：30-34页

核心收录：

学科分类：08[工学] 0803[工学-光学工程] 

基　　金：Narodowe Centrum Nauki(NCN)(2014/15/B/ST3/04252) Narodowe Centrum Badan'i Rozwoju(NCBR)(1/POLBER-1/2014) 

主　　题：InGaN InAlGaN superluminescent diodes fabricated on patterned substrates an alternative semiconductor broadband emitter 

摘      要：We demonstrate InGaN violet light-emitting superluminescent diodes with large spectral width suitable for applications in optical coherence *** was achieved using the concept of nonlinear indium content profile along the superluminescent diode waveguide.A specially designed 3D substrate surface shape leads to a step-like indium content profile,with the indium concentration in the InGaN/GaN quantum wells ranging approximately between 6% and 10%.Thanks to this approach,we were able to increase the width of the spectrum in processed devices from 2.6 nm(reference diode)to 15.5 nm.