ZnO-based deep-ultraviolet light-emitting devices

作     者：卢英杰 史志锋 单崇新 申德振 

作者机构：School of Physics and EngineeringZhengzhou University State Key Laboratory of Luminescence and ApplicationsChangchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of Sciences 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2017年第26卷第4期

页      面：50-58页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0803[工学-光学工程] 0704[理学-天文学] 

基　　金：Project supported by the National Natural Science Foundation for Distinguished Young Scholars of China(Grant No.61425021) the Natural Natural Science Foundation of China(Grant Nos.11374296,61376054,61475153,and 61604132) 

主　　题：ZnO deep-ultraviolet light-emitting devices Mg_xZn_（1-x）O Be_xZn_（1-x）O 

摘      要：Deep-ultraviolet（DUV） light-emitting devices（LEDs） have a variety of potential applications.Zinc-oxide-based materials,which have wide bandgap and large exciton binding energy,have potential applications in high-performance DUV LEDs.To realize such optoelectronic devices,the modulation of the bandgap is required.This has been demonstrated by the developments of Mg_xZn_（1-x）O and Be_xZn_（1-x）O alloys for the larger bandgap materials.Many efforts have been made to obtain DUV LEDs,and promising successes have been achieved continuously.In this article,we review the recent progress of and problems encountered in the research of ZnO-based DUV LEDs.