Enhancement of adjustable localized surface plasmon resonance in ZnO nanocrystals via a dual doping approach

作     者：Yusufkadie Yibi Jiawei Chen Jie Xue Jizhong Song Haibo Zeng 

作者机构：Ministry of Industry and Information Technology of the China Key Laboratory of Advanced Display Materials and Devices Institute of Optoelectronics & Nanomaterials Collegeof Materials Science and Engineering Nanjing University of Science and Technology Nanjing 210094 China 

出 版 物：《Science Bulletin》 (科学通报（英文版）)

年 卷 期：2017年第62卷第10期

页      面：693-699页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 070301[理学-无机化学] 0702[理学-物理学] 

基　　金：supported by the National Key Research and Development Program of China (2016YFB0401701) the National Basic Research Program of China (2014CB931702) the National Natural Science Foundation of China (61604074, 51572128) the National Natural Science Foundation of China and the Research Grants Council (NSFC-RGC5151101197) the Natural Science Foundation of Jiangsu Province (BK20160827) the China Postdoctoral Science Foundation (2016M590455) the Fundamental Research Funds for the Central Universities (30915012205, 30916015106) PAPD of Jiangsu Higher Education Institutions, the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (2015IOSKLKF15) 

主　　题：Doped zinc oxide Colloidal nanocrystals LSPR Electrical properties UV treatment Ink 

摘      要：Recently, the localized surface plasmon resonance （LSPR） concept was expanded from noble metals to doped semiconductor nanocrystals （NCs）. However, the strengthening of the intrinsically very weak LSPR in NCs remains a great challenge for its applications in optics, electronics and optoelectronics fields. In this work, we report on the remarkable strengthening and controllability of LSPR in ZnO through a dual-doping strategy. First, high quality In-doped ZnO （IZO） NCs with intense LSPR were synthesized by a simple single-pot method. Importantly, the LSPR can be tuned by simply adjusting the concentration of In dopant, as well as by UV light irradiation （photo-induced doping）. The pattern of electricity of an IZO NC film matches the shift of LSPR independent of dopant concentration. The UV light irradiation clearly enhanced the electrical properties of the films （350 fl/sq） due to increase carrier density explained by LSPR and confirmed by X-ray photoelectron spectroscopy, The IZO NCs can be easily dispersed in various organic solvents and serve as inks for assembling uniform films via solution processes. These IZO NC ink is promising for application in next-generation solution-based field effect transistors and other optoelec- tronic devices.