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Frequency synthesis of forced opto-electronic oscillators at the X-band

Frequency synthesis of forced opto-electronic oscillators at the X-band

作     者:T. Sun Li. Zhang A. K. Poddar U. L. Rohde A. S. Daryoush 

作者机构:Department of ECE Drexel University Philadelphia PA 19104 USA Synergy Microwave Corp. Paterson NJ 07504 USA 

出 版 物:《Chinese Optics Letters》 (中国光学快报(英文版))

年 卷 期:2017年第15卷第1期

页      面:40-44页

核心收录:

学科分类:080904[工学-电磁场与微波技术] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 

主  题:Fiber optics links and subsystems Radio frequency photonics Oscillators 

摘      要:Ultra-low phase noise performance is required for frequency agile local oscillators, which are the core for high resolution imagers, spectrum analyzers, and high speed data communications. A forced opto-electronic oscillator (OEO) benefits from frequency stabilization techniques for realizing a clean and low phase noise source at micro- wave and millimeter wave frequencies. Forced oscillation techniques of self-injection locking and self-phase lock loop are combined to provide an ultra-low oscillator phase noise both close-in and far-away from the carrier frequency, while a tunable yttrium iron garnet microwave filter combined with a wavelength tuned transversal filter are employed to implement both coarse and fine frequency tuning for a tunable X-band OEO. A phase noise of -137 dBc/Hz at an offset frequency of 10 kHz is achieved covering the frequencies of 9 to 11 GHz with a fine frequency tuning resolution of 44 Hz/pm and coarse tuning of 25 MHz/mA. Moreover, the long term stability of the output signal is tested, and a maximum frequency drift of 2 kHz is measured within 60 min for the X-band synthesizer.

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