Resistive Switching Memory of TiO2 Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method

作     者：Ming Xiao Kevin P.Musselman Walter W.Duley Norman Y.Zhou 

作者机构：Centre for Advanced Materials JoiningUniversity of WaterlooWaterlooON N2L 3G1Canada Waterloo Institute of NanotechnologyUniversity of WaterlooWaterlooON N2L 3G1Canada Department of Mechanics and Mechatronics EngineeringUniversity of WaterlooWaterlooON N2L 3G1Canada Department of Physics and AstronomyUniversity of WaterlooWaterlooON N2L 3G1Canada 

出 版 物：《Nano-Micro Letters》 (纳微快报（英文版）)

年 卷 期：2017年第9卷第2期

页      面：23-31页

核心收录：

学科分类：081702[工学-化学工艺] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by the Natural Sciences and Engineering Research Council(NSERC)of Canada The financial support of the State Scholarship Fund of China(No.201506160061) 

主　　题：TiO2 nanowire networks Resistive switching memory Ti foil Hydrothermal process Al electrode 

摘      要：The resistive switching characteristics of TiO_2 nanowire networks directly grown on Ti foil by a single-step hydrothermal technique are discussed in this paper. The Ti foil serves as the supply of Ti atoms for growth of the TiO_2 nanowires, making the preparation straightforward. It also acts as a bottom electrode for the device. A top Al electrode was fabricated by e-beam evaporation process. The Al/TiO_2 nanowire networks/Ti device fabricated in this way displayed a highly repeatable and electroforming-free bipolar resistive behavior with retention for more than 10~4 s and an OFF/ON ratio of approximately 70. The switching mechanism of this Al/TiO_2 nanowire networks/Ti device is suggested to arise from the migration of oxygen vacancies under applied electric field. This provides a facile way to obtain metal oxide nanowire-based Re RAM device in the future.