THE ROLE OF HYDROGEN IN Er-IMPLANTED a-SiO_x:H

作     者：C.Y. Chen W.D. Chen Y.Q. Wang J.J. Liang Z.G. Xu 

作者机构：Inst. of Semiconduct. Chinese Acad. of Sci. Beijing 100083 P.O. Box 921 China 

出 版 物：《Acta Metallurgica Sinica(English Letters)》 (金属学报（英文版）)

年 卷 期：2002年第15卷第1期

页      面：87-90页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：This work was supported by the National Natural Science Foundation of China (Grant No.69976028) 

主　　题：photoluminescence hydrogen erbium 

摘      要：A systematic investigation of the role of hydrogen in hydrogenated amorphous substo-ichiometric silicon oxide films (a-SiO:H) implanted with erbium is presented. The experimental results show that Er3+ luminescence increases with annealing temperature up to 535℃ and then drop sharply. Our work suggests that hydrogen evolution during annealing below 535℃ results in a reduction of defects in the films, and hence an improved Er3+ emission.