An improved design for Al Ga N solar-blind avalanche photodiodes with enhanced avalanche ionization

作     者：汤寅 蔡青 杨莲红 董可秀 陈敦军 陆海 张荣 郑有炓 

作者机构：Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and EngineeringNanjing University Department of Physics Changji College School of Mechanical and Electronic Engineering Chuzhou University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2017年第26卷第3期

页      面：588-591页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0803[工学-光学工程] 

基　　金：Project supported by the State Key Project of Research and Development Plan,China(Grant No.2016YFB0400903) the National Natural Science Foundation of China(Grant Nos.61634002,61274075,and 61474060) the Key Project of Jiangsu Province,China(Grant No.BE2016174) the Anhui University Natural Science Research Project,China(Grant No.KJ2015A153) the Open Fund(KFS)of State Key Lab of Optical Technologieson Nanofabrication and Microengineering,Institute of Optics and Electronics,Chinese Academy of Science 

主　　题：AlGaN deep ultraviolet photoelectric detector distributed Bragg reflector 

摘      要：To enhance the avalanche ionization, we designed a new separate absorption and multiplication AlGaN solarblind avalanche photodiode （APD） by using a high/low-Al-content AlGaN heterostructure as the multiplication region instead of the conventional AlGaN homogeneous layer. The calculated results show that the designed APD with Al0.3Ga0.7N/Al0.45Ga0.55N heterostructure multiplication region exhibits a 60% higher gain than the conventional APD and a smaller avalanche breakdown voltage due to the use of the low-Al-content Al0.3Ga0.7N which has about a six times higher hole ionization coefficient than the high-Al-content Al0.45Ga0.55N. Meanwhile, the designed APD still remains a good solar-blind characteristic by introducing a quarter-wave A1GaN/A1N distributed Bragg reflectors structure at the bottom of the device.