Observing the evolution of graphene layers at high current density
Observing the evolution of graphene layers at high current density作者机构：Department of Materials Science and Engineering Chiao Tung University 1001 University Road Hsinchiu 30010 Taiwan China Department of Electrical Engineering Central University Chung-Li City Taoyuan 32001 Taiwan China Department of Electronics Engineering and Institute of Electronics Chiao Tung University 1001 University Road Hsinchiu 30010 Taiwan China
出 版 物：《Nano Research》 (纳米研究（英文版）)
年 卷 期：2016年第9卷第12期
页 面：3663-3670页
核心收录：
学科分类：12[管理学] 1204[管理学-公共管理] 081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术] 081303[工学-城市规划与设计(含：风景园林规划与设计）] 0813[工学-建筑学] 0833[工学-城乡规划学] 083302[工学-城乡规划与设计]
基 金：support by the “Ministry of Science and Technology” through
主 题：graphene breakdown high current density in-situ transmissionelectron microscope (TEM) Ostwald ripening
摘 要：Graphene has demonstrated its potential in several practical applications owing to its remarkable electronic and physical properties. In this study, we successfully fabricated a suspended graphene device with a width down to 20 nm. The morphological evolution of graphene under various electric field effects was systematically examined using an in-situ transmission electron microscope （TEM）. The hourglass-shaped graphene sample instantly broke apart at 7.5 mA, indicating an impressive breakdown current density. The current-carrying capacity was calculated to be -1.6 × 10^9 ***-2, which is several orders higher than that of copper. The current-carrying capacity depended on the resistivity of graphene. In addition, atomic volume changes occurred in the multilayer graphene samples due to surface diffusion and Ostwald ripening （OR）, indicating that the breakdown mechanism is well approximated by the electric field. This study not only provides a theory to explain the breakdown behavior but also presents the effects on materials contacted with a graphene layer used as the transmission path.
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