A Method to Obtain Auger Recombination Coefficient in an InGaN-Based Blue Light-Emitting Diode

作     者：汪莱 孟骁 Jung-Hoon Song Tae-Soo Kim Seung-Young Lim 郝智彪 罗毅 孙长征 韩彦军 熊兵 王健 李洪涛 

作者机构：Tsinghua National Laboratory on Information Science and Technologyand Department of Electronic EngineeringTsinghua UniversityBeijing 100084 Department of PhysicsKongju National UniversityKongju 314701South Korea 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2017年第34卷第1期

页      面：107-109页

核心收录：

学科分类：08[工学] 0803[工学-光学工程] 

基　　金：Supported by the National Key Research and Development Program of China under Grant No 2016YFB0400102 the National Basic Research Program of China under Grant Nos 2012CB3155605,2013CB632804,2014CB340002 and 2015CB351900 the National Natural Science Foundation of China under Grant Nos 61574082,61210014,61321004,61307024,and 51561165012 the High-Technology Research and Development Program of China under Grant No 2015AA017101 the Tsinghua University Initiative Scientific Research Program under Grant Nos 2013023Z09N and 2015THZ02-3 the Open Fund of the State Key Laboratory on Integrated Optoelectronics under Grant No IOSKL2015KF10 the CAEP Microsystem and THz Science and Technology Foundation under Grant No CAEPMT201505 the Science Challenge Project under Grant No JCKY2016212A503 the Guangdong Province Science and Technology Program under Grant No 2014B010121004 

主　　题：InGaN A Method to Obtain Auger Recombination Coefficient in an InGaN-Based Blue Light-Emitting Diode CIE 

摘      要：We propose and demonstrate to derive the Auger recombination coefficient by fitting efficiency-current and carrier lifetime-current curves simultaneously, which can minimize the uncertainty of fitting results. The obtained Auger recombination coefficient is 1.0x10(-31) cm(6)s(-1) in the present sample, which contributes slightly to efficiency droop effect.