Atomistic simulation of free transverse vibration of graphene,hexagonal SiC, and BN nanosheets

作     者：Danh-Truong Nguyen Minh-Quy Le Thanh-Lam Bui Hai-Le Bui 

作者机构：School of Mechanical Engineering Hanoi University of Science and Technology Hanoi 10000 Vietnam International Institute for Computational Science and Engineering Hanoi University of Science and TechnologyHanoi 10000 Vietnam Faculty of Mechanical Engineering Hanoi University of Industry Hanoi 10000 Vietnam 

出 版 物：《Acta Mechanica Sinica》 (力学学报（英文版）)

年 卷 期：2017年第33卷第1期

页      面：132-147页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 070301[理学-无机化学] 

主　　题：Atomistic simulation Hexagonal sheet Transverse vibration Molecular dynamics finite element method 

摘      要：Free transverse vibration of monolayer graphene, boron nitride (BN), and silicon carbide (SiC) sheets is investigated by using molecular dynamics finite element method. Eigenfrequencies and eigenmodes of these three sheets in rectangular shape are studied with different aspect ratios with respect to various boundary conditions. It is found that aspect ratios and boundary conditions affect in a similar way on natural frequencies of graphene, BN, and SiC sheets. Natural frequencies in all modes decrease with an increase of the sheet’s size. Graphene exhibits the highest natural frequencies, and SiC sheet possesses the lowest ones. Missing atoms have minor effects on natural frequencies in this study.