High-performance heterogeneous complementary inverters based on n-channel MoS2 and p-channel SWCNT transistors
High-performance heterogeneous complementary inverters based on n-channel MoS2 and p-channel SWCNT transistors作者机构：Institute of Microelectronics Tsinghua National Laboratory for Information Science and Technology (TNList) Tsinghua University Beijing 100084 China Institute of Functional Nano and Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon-based Functional Materials and Devices Soochow University Suzhou 215123 China
出 版 物：《Nano Research》 (纳米研究（英文版）)
年 卷 期：2017年第10卷第1期
页 面：276-283页
核心收录：
学科分类：07[理学]
基 金：Acknowledgements This work was supported by the National Natural Science Foundation of China (Nos. 51672154 51372130 and 61401251) Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics (No. KF201517) and Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (No. KFJJ201402)
主 题：heterogeneous inverter MoS2 single-walledcarbon-nanotube (SWCNT) high voltage gain electrical properties
摘 要：Heterogeneous complementary inverters composed of bi-layer molybdenum disulfide （MoS2） and single-walled carbon-nanotube （SWCNT） networks are designed, and n-type MoS2/p-type SWCNT inverters are fabricated with a backgated structure. Field-effect transistors （FETs） based on the MoS2 and SWCNT networks show high electrical performance with large ON/OFF ratios up to 106 and 105 for MoS2 and SWCNT, respectively. The MoS2/SWCNT complementary inverters exhibit Vin-Vout signal matching and achieve excellent performances with a high peak voltage gain of 15, a low static-power consumption of a few nanowatts, and a high noise margin of 0.45VDD, which are suitable for future logic-circuit applications. The inverter performances are affected by the channel width-to-length ratios （W/L） of the MOSR-FETs and SWCNT-FETs. Therefore, W/L should be optimized to achieve a tradeoff between the gain and the power consumption.
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