Triboelectricity-assisted transfer of graphene for flexible optoelectronic applications
Triboelectricity-assisted transfer of graphene for flexible optoelectronic applications作者机构：State Key Laboratory for Advanced Metals and Materials School of Materials Science and Engineering University of Science and Technology Beijing Beijing 100083 China Beijing municipal Key Laboratory of New Energy Materials and Technologies University of Science and Technology Beijing Beijing 100083 China
出 版 物：《Nano Research》 (纳米研究（英文版）)
年 卷 期：2016年第9卷第4期
页 面：899-907页
核心收录：
学科分类：0808[工学-电气工程] 07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 070305[理学-高分子化学与物理] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0803[工学-光学工程] 0702[理学-物理学]
基 金：This work was supported by the National Basic Research Program of China （No. 2013CB932602） the Program of Introducing Talents of Discipline to Universities （No. B14003） National Natural Science Foundation of China （Nos. 51527802 and 51232001） Beijing Municipal Science ＆ Technology Commission the Fundamental Research Funds for Central Universities.
主 题：graphene transfer,triboelectricity assisted,polymer free,flexible photodetector
摘 要：In this work, we developed a novel triboelectricity-assisted polymer-free method for the transfer of large-area chemical vapor deposited graphene films. With the assistance of electrostatic forces from friction-generated charges, graphene sheets were successfully transferred from copper foils to flexible polymer substrates. Characterization results confirmed the presence of high quality graphene with less defects and contaminations, compared to graphene transferred by conventional poly（methyl rnethacrylate）-mediated processes. In addition, the graphene samples possessed outstanding electrical transport capabilities and mechanical stability, when studied as electron transfer matrixes in graphene/ZnO hybrid flexible photodetectors. Our results showed a broad application potential for this transfer method in future flexible electronics and optoelectronics.
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