The electrical switching characteristics of single copper tetra-cyanoquinodimethane nanowire

作     者：K.B.Zheng H.T.Shen C.N.Ye J.L.Li D.L.Sun G.R.Chen 

作者机构：Department of Materials Science Fudan University Department of Materials Science and Engineering Soochow University 

出 版 物：《Nano-Micro Letters》 (纳微快报（英文版）)

年 卷 期：2009年第1卷第1期

页      面：23-26页

核心收录：

学科分类：081702[工学-化学工艺] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 0817[工学-化学工程与技术] 08[工学] 070205[理学-凝聚态物理] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：financial support from Shanghai Science and Technology Development Fund(No.0752nm016) Shanghai Leading Academic Development Project(No.B113) 

主　　题：Cu(TCNQ) Nanowire Electrical switching Charge transfer Complexes 

摘      要：In this paper, method combined vapor transportation with in-situ chemical reaction is employed to synthesize Cu(TCNQ) nanowires. The typical diameter of nanowires is 50-500 nm with high uniformity. The electrical switching characteristics of single nanowire are observed. The ON-OFF resistance ratio for switching reaches 10~4. The investigation reveals a linear relationship between the switching threshold and the spacing between the two electrodes. The temporal response of the switching process is 30 ns and the switch exhibits good reproducibility. The collapse of the nanowire under the condition of current surge is also discussed. It is believed that the Cu(TCNQ) nanowire could be promising for applications in nanoelectronics.