Effects of Reaction Temperature on Microstructure and Advanced Pseudocapacitor Properties of NiO Prepared via Simple Precipitation Method
Effects of Reaction Temperature on Microstructure and Advanced Pseudocapacitor Properties of NiO Prepared via Simple Precipitation Method作者机构:Institute for Clean Energy & Advanced Materials Southwest University
出 版 物:《Nano-Micro Letters》 (纳微快报(英文版))
年 卷 期:2013年第5卷第4期
页 面:289-295页
核心收录:
学科分类:081704[工学-应用化学] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0703[理学-化学] 070301[理学-无机化学] 0702[理学-物理学]
基 金:financially supported by the National Natural Science Foundation of China (21063014 and 21163021) Fundamental Research Funds for the Central Universities (XDJK2013B031) the Natural Science Foundation of Chongqing (cstc2013jcyj A0396)
主 题:Nickel oxide Temperature Morphology Pseudocapacitor
摘 要:Morphology-controlled synthesis and large-scale self-assembly of nanoscale building blocks into complex nanoarchitectures is still a great challenge in nanoscience. In this work, various porous NiO nanostructures are obtained by a simple ammonia precipitation method and we find that the reaction temperature has a significant impact on their microstructures. Nanoflowers and nanoflakes have been obtained at 0 and50, while, weakly self-assembly nanoflowers with nanoflakes are formed at 20. In order to understand the process-structure-property relationship in nanomaterial synthesis and application, the as-prepared NiO is used as supercapacitor electrode materials, and evaluated by electrochemical measurement. The experimental results indicate that the material obtained at lower temperature has higher pseudocapacitance, the specific capacitance of 944, 889 and 410 F/g are reached for the materials prepared at 0, 20 and 50 and further calcined at 300, respectively. While the material obtained at higher temperature has excellent rate capacity. This offers us an opportunity searching for exciting new properties of NiO, and be useful for fabricating functional nanodevices.