A Cu/ZnO Nanowire/Cu Resistive Switching Device

作     者：Lijie Li Yan Zhang Zhengjun Chew 

作者机构：Multidisciplinary Nanotechnology Centre College of Engineering Swansea University Wuhan University of Technology Institute of Theoretical Physics Lanzhou University Beijing Institute of Nanoengergy and Nanosystem Chinese Academy of Science 

出 版 物：《Nano-Micro Letters》 (纳微快报（英文版）)

年 卷 期：2013年第5卷第3期

页      面：159-162页

核心收录：

学科分类：080801[工学-电机与电器] 0808[工学-电气工程] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：the UK Leverhulme Trust  College of Engineering and Department of Research and Innovation of Swansea University for financial support 

主　　题：Cu/ZnO Nanowires Flip-chip Resistive switching Device 

摘      要：A new device has been realized using flip-chip joining two printed circuit boards(PCBs) on which zinc oxide(ZnO) nanowires were synthesized. Energy dispersive X-ray measurement has been conducted for the ZnO nanowires, confirming that Cu elements have been diffused into the nanowires during the chemical growth process. From I-V measurements, this Cu/ZnO nanowire/Cu structure exhibits a resistive tuning behaviour, which varies greatly with the frequency of the applied sinusoidal source.