High Potential Columnar Nanocrystalline AlN Films Deposited by RF Reactive Magnetron Sputtering

作     者：Chengzhang Han Da Chen Yaozhong Zhang Dong Xu Yijian Liu Eric Siu-Wai Kong Yafei Zhang 

作者机构：Key Laboratory for Thin Film and Microfabrication of the Ministry of Education Research Institute of Micro/Nano Science and Technology Shanghai Jiao Tong University Department of Applied Physics College of Science Shandong University of Science and Technology 

出 版 物：《Nano-Micro Letters》 (纳微快报（英文版）)

年 卷 期：2012年第4卷第1期

页      面：40-44页

核心收录：

学科分类：081702[工学-化学工艺] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

主　　题：Columnar film Aluminum nitride Piezoelectric effect RF sputtering Optical property 

摘      要：Columnar nanocrystalline aluminum nitride(cnc-AlN) thin films with(002) orientation and uniform texture have been deposited successfully on large silicon wafers by RF reactive magnetron *** the optimum sputtering parameters, the deposited cnc-AlN thin films show a c-axis preferred orientation with a crystallite size of about 28 nm and surface roughness(RMS) of about 1.29 nm. The cnc-AlN thin films were well transparent with an optical band gap about 4.8 e V, and the residual compressive stress and the defect density in the film have been revealed by Ramon spectroscopy. Moreover, piezoelectric performances of the cnc-AlN thin films executed effectively in a film bulk acoustic resonator structure.