Crosstalk analysis of silicon-on-insulator nanowire-arrayed waveguide grating

作     者：李凯丽 安俊明 张家顺 王玥 王亮亮 李建光 吴远大 尹小杰 胡雄伟 

作者机构：State Key Laboratory on Integrated OptoelectronicsInstitute of SemiconductorsChinese Academy of Sciences 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2016年第25卷第12期

页      面：294-299页

核心收录：

学科分类：070207[理学-光学] 07[理学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0702[理学-物理学] 

基　　金：Project supported by the National High Technology Research and Development Program of China(Grant No.2015AA016902) the National Natural Science Foundation of China(Grant Nos.61274047,61435013,61307034,and 61405188) the National Key Research and Development Program of China(Grant No.2016YFB0402504) 

主　　题：SOI nanowire AWG crosstalk phase errors 

摘      要：The factors influencing the crosstalk of silicon-on-insulator （SO1） nanowire arrayed waveguide grating （AWG） are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography （DUV） and inductively coupled plasma etching （ICP） technology. The measurement results show that the crosstalk performance is improved by about 7 dB through adopting 800 nm arrayed waveguide width.