Terahertz Generation Using Implanted InGaAs Photomixers and Multi-wavelength Quantum Dot Lasers

作     者：Y.Hou J.R.Liu M.Buchanan A.J.Spring Thorpe P.J.Poole H.C.Liu Ke Wu Sjoerd Roorda X.P.Zhang 

作者机构：Institute for Microstructural Sciences National Research Council Also with Department of Electrical Engineering Concordia University Now with Key Laboratory of Artificial Structures and Quantum Control Department of Physics Shanghai Jiao Tong University Department of Electrical Engineering Ecole Polytechnique Département de physique Université de Montréal Department of Electrical Engineering Concordia University 

出 版 物：《Nano-Micro Letters》 (纳微快报（英文版）)

年 卷 期：2012年第4卷第1期

页      面：10-13页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

基　　金：supported in part by NSERC. HCL thanks the support by the National Ma jor Basic Research Pro jects (2011CB925603) Shanghai Municipal Ma jor Basic Research Pro ject (09DJ1400102) 

主　　题：Proton implanted In Ga As Trahertz Photomixer Multi-wavelength quantum dot laser Fourier transform infrared spectroscopy 

摘      要：We report on a study of terahertz(THz) generation using implanted In Ga As photomixers and multi-wavelength quantum dot lasers. We carry out In Ga As materials growth, optical characterization, device design and fabrication, and photomixing experiments. This approach is capable of generating a comb of electromagnetic radiation from microwave to terahertz. For shortening photomixer carrier lifetime, we employ proton implantation into an epitaxial layer of lattice matched In Ga As grown on InP. Under a 1.55 μm multimode In GaAs/In GaAsP quantum dot laser excitation, a frequency comb with a constant frequency spacing of 50 GHz generated on the photomixer is measured, which corresponds to the beats of the laser longitudinal modes. The measurement is performed with a Fourier transform infrared spectrometer. This approach affords a convenient method to achieve a broadband multi-peak coherent THz source.