Nanoscale spatial phase modulation of GaAs growth in V-grooved trenches on Si(001) substrate

作     者：李士颜 周旭亮 孔祥挺 李梦珂 米俊萍 王梦琦 潘教青 

作者机构：Key Laboratory of Semiconductor Materials ScienceInstitute of SemiconductorsChinese Academy of Sciences 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2016年第25卷第12期

页      面：451-454页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 

基　　金：Project supported by the National Science and Technology Major Project of Science and Technology of China(Grant No.2011ZX02708) the National Natural Science Foundation of China(Grant No.61504137) 

主　　题：phase modulation GaAs grooves Si 

摘      要：This letter reports the nanoscale spatial phase modulation of GaAs growth in V-grooved trenches fabricated on a Si （001） substrate by metal-organic vapor-phase epitaxy, Two hexagonal GaAs regions with high density of stacking faults parallel to Si {111 } surfaces are observed. A strain-relieved and defect-free cubic phase GaAs was achieved above these highly defective regions. High-resolution transmission electron microscopy and fast Fourier transforms analysis were performed to characterize these regions of GaAs/Si interface. We also discussed the strain relaxation mechanism and phase structure modulation of GaAs selectively grown on this artificially manipulated surface.