Low temperature doping of ZnO nanostructures

作     者：M.A.THOMAS H.KANDEL Y.C.SOO 

作者机构：Department of Physics and AstronomyUniversity of Arkansas at Little Rock 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2009年第52卷第2期

页      面：318-323页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

主　　题：zinc oxide nanowires doping 

摘      要：Doping of ZnO nanostructures was investigated by using a low temperature electrochemical process. Various dopant materials have been studied, including transition metals, group I, and group VII elements. The structure, composition, and optical properties of the doped ZnO nanostructures were analyzed by scanning electron microscopy, energy dispersive X-ray spectroscopy, photoluminescence, and x-ray diffraction. It was demonstrated that dopant elements were incorporated into the ZnO structures. The effects of dopant incorporation on the structure and properties of ZnO were also investigated. This low temperature approach is compatible with current micro-fabrication techniques and promising for large-scale production of doped ZnO nanostructures for optical and electronic applications.