Effect of Si δ-Doping on the Linear and Nonlinear Optical Absorptions and Refractive Index Changes in InAlN/GaN Single Quantum Wells

作     者：Shaffa Almansour Hassen Dakhlaoui Emane Algrafy 

作者机构：Department of PhysicsCollege of Science for GirlsUniversity of Dammam 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2016年第33卷第2期

页      面：102-105页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：Supported by the Deanship of Scientific Research of University of Dammam under Grant No 2015134 

主　　题：of is In GaN in Doping on the Linear and Nonlinear Optical Absorptions and Refractive Index Changes in InAlN/GaN Single Quantum Wells on 

摘      要：In the framework of effective mass approximation, we theoretically investigate the electronic structure of the Si δ-doped InAIN/GaN single quantum well by solving numerically the coupled equations Schrodinger-Poisson self-consistently. The linear, nonlinear optical absorption coefficients and relative refractive index changes are calculated as functions of the doping concentration and its thickness. The obtained results show that the position and the amplitude of the linear and total optical absorption coefficients and the refractive index changes can be modified by varying the doping concentration and its thickness. In addition, it is found that the maximum of the optical absorption can be red-shifted or blue-shifted by varying the doping concentration. The obtained results are important for the design of various electronic components such as high-power FETs and infrared photonic devices.