INFRARED ABSORPTION BANDS OF Si-H CENTERS IN γ-RAY IRRADIATED FZSi GROWN IN HYDROGEN ATMOSPHERE AND THEIR IDENTIFICATION

作     者：杜永昌 张玉峰 孟祥提 沈宏扬 DU YONGCHANG ZHANG YUFENG (Department of Physics, Peking University) MENG XIANGTI (Institute of Nuclear Energy Technology, Qinghua University) AND SHEN HONGYANG (Institute of Atomic Energy, Academia Sinica, Beijing)

作者机构：Department of Physics Peking University Institute of Nuclear Energy Technology Qinghua University Institute of Atomic Energy Academia Sinica Beijing 

出 版 物：《Science in China,Ser.A》 (中国科学A辑(英文版))

年 卷 期：1987年第30卷第2期

页      面：176-185页

核心收录：

学科分类：0810[工学-信息与通信工程] 07[理学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

主　　题：RAY IRRADIATED FZSi GROWN IN HYDROGEN ATMOSPHERE AND THEIR IDENTIFICATION INFRARED ABSORPTION BANDS OF Si-H CENTERS IN Si 

摘      要：Gamma-ray irradiated and neutron irradiated silicon have been stualea using the rourler transiorm inftared spectroscopy and deep-level transient spectroscopy. In γ-ray irradiated silicon the production rate of divacancy is very low, which can be used to identify radiation point defects. Only three new Si-H stretching vibration bands of 1832, 2054 and 1980 cm-1 are produced in γ-ray irradiated FZ （H）Si, fewer than that in neutron irradiated FZ（H）Si. In this paper the models of the three bands are discussed and their optical absorption sections are estimated.