GaAs中S2+分子离子注入（英文）

作     者：范伟东,王渭源 

作者机构：中国科学院上海冶金研究所 中国科学院上海冶金研究所 

出 版 物：《固体电子学研究与进展》 (Research & Progress of SSE)

年 卷 期：1989年第4期

页      面：444-444页

核心收录：

主　　题：离子注入 S2 

摘      要：Molecular ion S2+ implantation into GaAs has been investigated to form very thin active layers. After implantation, the transient annealing(TA) and furnace annealing (FA) were used. The measurements of activation efficiency, mobility, carrier concentration profiles were carried out. The experiments show that after TA, the activation efficiency, mobility and carrier distribution are almost the same between S+ and S2+ implanted samples with an implantation energy of 50keV and 100keV,adose of 3×1013 cm-2 and 1.5×1013cm-2 *** shows that the damage of S2+-implan-ted samples can be removed by TA, and a very thin active layer can be formed by the implantation of S2+ at 50keV.