Compact, temperature-stable multi-gigahertz passively modelocked semiconductor disk laser

作     者：宋晏蓉 郭于鹤洋 张鹏 田金荣 

作者机构：College of Applied Sciences Beijing University of Technology College of Physics and Electronic Engineering Chongqing Normal University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2015年第24卷第8期

页      面：356-361页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

基　　金：supported by the National Natural Science Foundation of China(Grant No.61177047) the Key Project of the National Natural Science Foundation of China(Grant No.61235010) 

主　　题：mode-locked lasers thermal effects diode-pumped 

摘      要：We present a compact passively mode-locked semiconductor disk laser at 1045 nm. The gain chip without any post processing consists of 16 compressively strained In Ga As symmetrical step quantum wells in the active region. 3-GHz repetition rate, 4.9-ps pulse duration, and 30-mW average output power are obtained with 1.4 W of 808-nm incident pump power. The temperature stability of the laser is demonstrated to have an ideal shift rate of 0.035 nm/K of the lasing wavelength.