Transport Properties of LCMO Granular Films Deposited by the Pulsed Electron Deposition Technique

作     者：陈雷明 CHEN Leiming 1 , XU Bin 2 , ZHANG Yan 1 , CHEN Zhenping 3 (1.Zhengzhou Institute of Aeronautical Industry Management, Zhengzhou 450015, China;2.North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011, China;3.Zhengzhou University of Light Industry, Zhengzhou 450002, China)

作者机构：Zhengzhou Institute of Aeronautical Industry Management 

出 版 物：《Journal of Wuhan University of Technology(Materials Science)》 (武汉理工大学学报（材料科学英文版）)

年 卷 期：2011年第26卷第6期

页      面：1027-1031页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：Funded by the National Natural Science Foundation of China(No.10875107) the Aeronautical Science Foundation(No.2010ZF55013) the Basic and Advanced Technology Program of Henan Province (No.112300410229) the Foundation for University Young Key Teacher by Henan Province (No. 2010GGJS-146) 

主　　题：colossal magnetoresistance granular film transport properties 

摘      要：By finely controlling the deposition parameters in the pulsed electron deposition process, granular La 2/3 Ca 1/3 MnO 3 （LCMO） film was grown on silicon substrates. The substrate temperature, ambient pressure in the deposition chamber and acceleration potential for the electron beam were all found to affect the grain size of the film, resulting in different morphologies of the samples. Transport properties of the obtained granular films, especially the magnetoresistance （MR）, were studied. Prominent low-field MR was observed in all samples, indicating the forming of grain boundaries in the sample. The low-field MR show great sensitive to the morphology evolution, which reaches the highest value of about 40% for the sample with the grain size of about 250 nm. More interestingly, positive-MR （p-MR） was also detected above 300 K when low magnetic field applying, whereas it disappeared with higher magnetic field applied up to 1.5 and 2 Tesla. Instead of the spin- polarized tunneling process being commonly regarded as a responsible reason, lattice mismatch between LCMO film and silicon substrate appears to be the origin of the p-MR