Al在Si（111）面上吸附的多重散射Xα方法研究（英文）

作     者：孙国跃,刘惠周,唐景昌 

作者机构：中山大学物理系 中山大学物理系 浙江大学物理系 

出 版 物：《固体电子学研究与进展》 (Research & Progress of SSE)

年 卷 期：1989年第4期

页      面：416-417页

核心收录：

主　　题：多重散射 Al Si 

摘      要：This paper presents a self-consistent Multiple-Scattering Xa method to calculate the chsmisorption of Al on Si(111) by cluster models--T4 model and H3 model, In T4 modal, the Al is placed in the site above the second-layer Si atoms, where each Al atom has four neighbors of Si: three in the first surface layer and one in the second layer directly below the first. In H3 model, the Al atoms are placed in the threefold hollow sites, each bonds to three surface atoms. The binding energy of the two models is calculated, and the position of the Al is determined. In addition, the charge transfers are calculated and the details of the bonding are analysed in the paper.