AlGaAs/GaAs太阳电池抗辐照性能的研究(英文)

作     者：吴正云 吴荣华 陈朝 刘士毅 闵惠芳 钟金泉 王振英 王家宽 Wu Zhengyun, Wu Ronghua, Chen ChaoLiu Shiyi (Physics Department, Xiamen University)Min Huifang, Zhong Jinquan, Wang ZhenyingWang Jiakuan (Shanghai Institute of Metallurgy, Acedemica Sinica}

作者机构：厦门大学物理系 中国科学外海冶金研究所 

出 版 物：《固体电子学研究与进展》 (Research & Progress of Solid State Electronics)

年 卷 期：1989年第4期

页      面：482-482页

学科分类：1002[医学-临床医学] 100214[医学-肿瘤学] 10[医学] 

主　　题：AlGaAs/GaAs 抗辐照性能 

摘      要：The changes of performence of AlGaAs/GaAs heteroface solar cell after 1 -MeV electron irradiation has been studied by the experimental and numerical fitting. Using an improved damped least square method, the spectral response and dark J-V characteristic of the cells are fitted according to the various theoretical formulas. From the fitting calculation, a number of materials, structural and electric parameters of the cell are obtained. The experimental data and calculated results show that the critical irradiation flux of the cell is about 2.2×1014 cm-2, the damge constant KL for the minority carrier diffusion length in n-GaAs layer due to irradiation is found to be larger than that in p-GaAs, layer, they are about 7.0×10-3 and 2.2×10-7, respectively, the degradation of the minority carrier diffusion length in p-GaAs layer and the increase in the recombination velocity at interfaec are the majar reasons for the cell performence degradation. The cell with a shallow junction has higher irradiation resistance than the one with a deep junction. Based on the studies, the method for improving the irradiation resistance of the cell is discussed.