Electrical characterization of integrated passive devices using thin film technology for 3D integration
Electrical characterization of integrated passive devices using thin film technology for 3D integration作者机构:National Key Laboratory of Science and Technology on Micro/Nano FabricationPeking University Department of Mechanical and Electrical EngineeringXiamen University Information Microsystem InstituteBeijing Information Science and Technology University
出 版 物:《Journal of Zhejiang University-Science C(Computers and Electronics)》 (浙江大学学报C辑(计算机与电子(英文版))
年 卷 期:2013年第14卷第4期
页 面:235-243页
核心收录:
学科分类:080903[工学-微电子学与固体电子学] 0810[工学-信息与通信工程] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0812[工学-计算机科学与技术(可授工学、理学学位)]
基 金:Project (No. 2009ZX02038) supported by the National Science and Technology Major Project of China
主 题:集成技术 电气特性 无源器件 薄膜技术 3D IPDS 无线电频率 行业应用
摘 要:With the development of 3D integration technology,microsystems with vertical interconnects are attracting attention from researchers and industry applications.Basic elements of integrated passive devices(IPDs),including inductors,capacitors,and resistors,could dramatically save the footprint of the system,optimize the form factor,and improve the performance of radio frequency(RF) systems.In this paper,IPDs using thin film built-up technology are introduced,and the design and characterization of coplanar waveguides(CPWs),inductors,and capacitors are presented.