Characteristics of the Structure and Properties of ZnSnO3 Films by Varying the Magnetron Sputtering Parameters

作     者：Fa-Yu Wu Jian-Wei Li Yi Qi Wu-Tong Ding Yuan-Yuan Guo Yan-Wen Zhou 

作者机构：Laser Advanced Manufacturing Technology Center School of Materials and Metallurgy University of Science and Technology Liaoning Anshan 114051 China SINOTRUK (Hong Kong) Limited Jinan Casting and Forging Center Zhangqiu 250200 China School of Material Science and Engineering Shenyang University of Technology Shenyang 110870 China 

出 版 物：《Acta Metallurgica Sinica(English Letters)》 (金属学报（英文版）)

年 卷 期：2016年第29卷第9期

页      面：827-833页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：financially supported by the National Natural Science Foundation of China (Nos. 51372109 and 51502126) the Foundation of Educational Department of Liaoning (No. L2015260) the Open Subject of Key Laboratory Liaoning Province (No. USTLKFSY201501) 

主　　题：ZnSnO3 film Powder target Magnetron sputtering Optical property Electrical property 

摘      要：Transparent conductive oxide ZnSnO3 films were prepared by radio-frequency magnetron sputtering from powder targets and were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, transmission electron microscopy, atomic force microscopy, surface profile, UV-Vis spectroscopy, and Hall effect. The structures of the films were either amorphous or nanocrystalline depending on sputtering parameters including deposition time, target power, chamber pressure, and the target-substrate separation. The average transmittance of the ZnSnO3 films within the visible wavelength was approximately 80% and the resistivity of the ZnSnO3 films was in the range of 10^-3-10^-4 Ω cm. The structural, optical, and electrical properties of the ZnSnO3 films could be adjusted and regulated by optimizing the sputtering process, allowing materials with specific properties to be designed.