Rapidly counting atomic planes of ultra-thin MoSe2 nanosheets(1≤n≤4)on SiO2/Si substrate

作     者：Yi-Ping Wang Hui-Jun Zhou Gui-Hua Zhao Tian-Long Xia Lei Wang Le Wang Li-Yuan Zhang 

作者机构：Department of PhysicsRenmin University of ChinaBeijing 100872China Beijing Key Laboratory of Opto-electronic Functional Materialsand Micro-nano DevicesRenmin University of China Department of Power and Electrical EngineeringNorthwest A&F UniversityYangling 712100ShaanxiChina 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：2016年第35卷第8期

页      面：632-636页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 070301[理学-无机化学] 

基　　金：financially supported by the Research Funds of Renmin University of China(Nos.13XNLF02 and 14XNLQ07) the National Natural Science Foundation of China(Nos.11304381,11004245,11174366 and 51202200) 

主　　题：Thickness identification Optical contrast MoSe2 Optical microscopy 

摘      要：The optical, thermal and electrical properties of ultra-thin two-dimensional （2D） crystal materials are highly related to their thickness. Therefore, identifying the atomic planes of few-layer crystal materials rapidly is crucial to fundamental study. Here, a simple technique was demonstrated based on optical contrast for counting atomic planes （n） of few-layer MoSe2 on SiO2/Si substrates. It is found that the optical contrast of single-layer MoSe2 depends on light wavelength and thickness of SiO2 on Si substrate. The data calculated based on a Fresnel law-based model as well as atomic force microscopy （AFM） mea- surements fit well with the values measured by spectro- scopic ellipsometer. Furthermore, the calculated and measured contrasts were integral and plotted, which can be used to determine the MoSe2 atomic planes （1 ≤ n ≤ 4） accurately and rapidly.