Composition control of pulsed laser deposited copper(Ⅰ) chalcogenide thin films via plasma/Ar interactions

作     者：陈吉堃 吕艳红 Max Dobeli 李宇龙 史迅 陈立东 

作者机构：State Key Laboratory of High Performance Ceramics and Superfine MicrostructureShanghai Institute of CeramicsChinese Academy of Sciences CAS Key Laboratory of Materials for Energy ConversionShanghai Institute of CeramicsChinese Academy of Sciences University of Chinese Academy of Sciences Laboratory of Ion Beam PhysicsETH Zurich 

出 版 物：《Science China Materials》 (中国科学（材料科学（英文版）)

年 卷 期：2015年第58卷第4期

页      面：263-268页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by the National Basic Research Program of China (2013CB632501) the National Natural Science Foundation of China (51472262) the Key Research Program of Chinese Academy of Sciences (KGZD-EW-T06) 

主　　题：脉冲激光沉积 薄膜材料 PLD 铜基 氩气 

摘      要：We present how the applied Ar background pressure correlates to the cation and anion composition of Cu(I) chalcogenide thin films grown by pulsed laser deposition(PLD). The as-grown films produced at ~10-2 mbar p Ar show a more pronounced deficiency in lighter composition, as compared with using quasi-vacuum or ~10-1 mbar. The thermoelectric performance of the as-grown Cu2 Se varies consistently with the respective changes in Cu/Se ratio vs. p Ar. The optimum thermoelectric performance of Cu2 Se is achieved by growing in vacuum or quasi-vacuum, where dense and even thin film morphology is obtained while the cation/anion composition is more congruent than at higher p Ar.