Single-mode hybrid Al Ga In As/Si octagonal-ring microlaser with stable output

作     者：隋少帅 唐明英 杨跃德 肖金龙 杜云 黄永箴 

作者机构：The State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences 

出 版 物：《Chinese Optics Letters》 (中国光学快报（英文版）)

年 卷 期：2016年第14卷第3期

页      面：55-58页

核心收录：

学科分类：080901[工学-物理电子学] 080902[工学-电路与系统] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

基　　金：supported by the High Technology Project of China(No.2012AA012202) the NSFC/RGC joint project(No.61431166003) 

主　　题：mode In ring Single-mode hybrid Al Ga In As/Si octagonal-ring microlaser with stable output As Al Ga 

摘      要：Hybrid octagonal-ring microlasers are investigated for realizing a stable output from a silicon waveguide based on a two-dimensional simulation. The inner radius of the ring is optimized to achieve single-mode and low-threshold operation. Using the divinylsiloxane-benzocyclobutene （DVS-BCB） bonding technique, a hybrid A1GaInAs/Si octagonal-ring microlaser vertically coupled to a silicon waveguide is fabricated with a side length of 21.6 pm and an inner radius of 15 pm. A single transverse-mode operation is achieved with a threshold current density of 0.8 kA/cm2 and a side-mode suppression ratio above 30 dB, and a stable output from the lower silicon waveguide is obtained.