Scaling relation of domain competition on(2+1)-dimensional ballistic deposition model with surface diffusion

作     者：Kenyu Osada Hiroyasu Katsuno Toshiharu Irisawa Yukio Saito 

作者机构：Department of Physics Gakushuin University Computer Centre Gakushuin University Department of Physical Science Ritsumeikan University Department of Physics Keio University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2016年第37卷第9期

页      面：12-17页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

主　　题：domain competition ballistic deposition model Kardar Parisi Zhang universality class surface diffusion 

摘      要：During heteroepitaxial overlayer growth multiple crystal domains nucleated on a substrate surface compete with each other in such a manner that a domain covered by neighboring ones stops *** number density of active domains ρ decreases as the height h increases.A simple scaling argument leads to a scaling law of ρ~ h^（-γ） with a coarsening exponent γ=d/z,where d is the dimension of the substrate surface and z the dynamic exponent of a growth *** scaling relation is confirmed by performing kinetic Monte Carlo simulations of the ballistic deposition model on a two-dimensional（d=2） surface,even when an isolated deposited particle diffuses on a crystal surface.