Energy-Crossing and Its Effect on Lifetime of the 4s24p2P3/2 Level for Highly Charged Ga-Like Ions
作者机构：Key Laboratory of Atomic and Molecular Physics and Functional Material of Gansu ProvinceCollege of Physics and Electronic EngineeringNorthwest Normal UniversityLanzhou 730070 Fundamental DepartmentTaiyuan Normal UniversityTaiyuan 030012
出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)
年 卷 期：2012年第29卷第7期
页 面：75-79页
核心收录：
学科分类：07[理学] 070202[理学-粒子物理与原子核物理] 0702[理学-物理学]
基 金：Supported by the National Natural Science Foundation of China under Grant Nos 10876028,10847007 and 10964010 the Scientific Research Foundation of the Higher Education Institutions of Gansu Province
主 题：configuration allowed Highly
摘 要：The multi-configuration Dirac-Fock method is employed to calculate the energy levels and transition probabilities for the electric dipole allowed (El) and forbidden (M1,E2) lines for the 4s^(2) 4p,4s4p^(2) and 4s^(2) 4d configurations of highly charged Ga-like ions from Z =*** lifetimes of the 4s^(2) 4p^(2) P3/2 level of the ground configuration are also *** on our calculations,it is found that the energy level of the 4s2 4p 2P3/2 is higher than that of the 4s4p24P1/2 for the high-Z Ga-like ions with Z ≥ 74,so as to generate an energy crossing at Z =*** effect of the energy crossing is important to the calculation of the 4s^(2) 4p^(2) P3/2 level lifetime for Ga-like ions with Z≥ 74.
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