Intraband Dynamics and Terahertz Emission in Biased GaAs/In_(0.53)Ga_(0.47)As Semiconductor Superlattices
Intraband Dynamics and Terahertz Emission in Biased GaAs/In_(0.53)Ga_(0.47)As Semiconductor Superlattices作者机构:College of Physics Science and Information Engineering Jishou University Jishou 416000 China
出 版 物:《Communications in Theoretical Physics》 (理论物理通讯(英文版))
年 卷 期:2009年第52卷第12期
页 面:1134-1138页
核心收录:
学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学]
基 金:Supported by National Science Foundation of China under Grant No.10647132 the Scientific Research Fund of Hunan Provincial Education Department under Grant No.05B014
主 题:semiconductor superlattices terahertz optical spectra excitons
摘 要:Using an excitonic basis, we investigate the intraband polarization, optical absorption spectra, and terahertzemission of semiconductor superlattice with the density matrix theory. The excitonic Bloch oscillation is driven by thedc and ac electric fields. The slow variation in the intraband polarization depends on the ac electric field frequency. Theintraband polarization increases when the ac electric field frequency is below the Bloch frequency. When the ac electricfield frequency is above the Bloch frequency, the intraband polarization downwards and its intensity decreases. Thesatellite structures in the optical absorption spectra are presented. Due to excitonic dynamic localization, the emissionlines of terahertz shift in different ac electric field and dc electric field.