Nanoscale strain engineering of graphene and graphene-based devices

作     者：N.-C.Yeh C.-C.Hsu M.L.Teague J.-Q.Wang D.A.Boyd C.-C.Chen 

作者机构：Department of Physics Institute for Quantum Information and Matter and Kavli Nanoscience InstituteCalifornia Institute of Technology Department of Physics Fudan University Department of Physics California Institute of Technology 

出 版 物：《Acta Mechanica Sinica》 (力学学报（英文版）)

年 卷 期：2016年第32卷第3期

页      面：497-509页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 0802[工学-机械工程] 0701[理学-数学] 0702[理学-物理学] 0801[工学-力学（可授工学、理学学位）] 

基　　金：supported by the National Science Foundation under the Institute for Quantum Information and Matter at California Institute of Technology 

主　　题：Graphene Strain engineering Nanostructures Dirac fermions Pseudo magnetic field Valleytronics 

摘      要：Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness. In particular, strained graphene can result in both charging effects and pseudo-magnetic fields, so that controlled strain on a perfect graphene lattice can be tailored to yield desirable electronic properties. Here, we describe the theoretical foundation for strain-engineering of the electronic properties of graphene, and then provide experimental evidence for strain-induced pseudo-magnetic fields and charging effects in monolayer graphene. We further demonstrate the feasibility of nano-scale strain engineering for graphene-based devices by means of theoretical simulations and nano-fabrication technology.