Ultrafast and Broadband Terahertz Switching Based on Photo-Induced Phase Transition in Vanadium Dioxide Films

作     者：CHEN Zhi WEN Qi-Ye DONG Kai SUN Dan-Dan QIU Dong-Hong ZHANG Huai-Wu 陈智;文岐业;董凯;孙丹丹;邱东鸿;张怀武

作者机构：National Key Laboratory of Science and Technology of CommunicationUniversity of Electronic Science and Technology of ChinaChengdu 610054 State Key Laboratory of Electronic Thin films and Integrated DevicesUniversity of Electronic Science&Technology of ChinaChengdu 610054 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2013年第30卷第1期

页      面：150-153页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0803[工学-光学工程] 

基　　金：Supported by the National Nature Science Foundation of China under Grant Nos 61131005 and 61021061 Keygrant Project of the Ministry of Education of China(No 313013) the New Century Excellent Talent Foundation(No NCET-11-0068) Sichuan Youth S&T Foundation(No 2011JQ0001) Specialized Research Fund for the Doctoral Program of Higher Education(No 20110185130002) the Fundamental Research Funds for the Central Universities(No ZYGX2010J034) the CAEP THz Science and Technology Foundation(No CAEPTHZ201207) 

主　　题：pumping pump Switching 

摘      要：Single-phase VO_(2) thin films are sputtering deposited on BK7 substrates,and sharp insulator-to-metal phase transition is obtained with a resistivity change of four orders of ***(THz)pump-probe measurements reveal that by illuminating the films with a low pumping power of 143μJ/cm^(2),VO_(2) films exhibit an ultrafast optical switching to THz transmission within 8 ***,the THz switching ratio reaches over 80%in a wide frequency range from 0.3 to 2.5 *** these outstanding features indicate a strong potential of VO_(2) films for broadband terahertz wave switching and modulation applications.