Study on internal quantum efficiency of blue InGaN multiple-quantum-well with an InGaN underneath layer

作     者：ina WANG JiaXing, WANG Lai, ZHAO Wei, ZOU Xiang & LUO Yi National Laboratory for Information Science and Technology/State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China 

出 版 物：《中国科学:技术科学》 (Scientia Sinica(Technologica))

年 卷 期：2010年第2期

页      面：201-201页

核心收录：

学科分类：070207[理学-光学] 07[理学] 08[工学] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：Supported by the National Natural Science Foundation of China (Grant Nos.60536020) Supported by the National Natural Science Foundation of China (Grant Nos.60723002) Major Project of Beijing Municipal Sci-ence and Technology Commission (Grant No.D0404003040321) 

主　　题：InGaN underneath layer (UL) multiple-quantum-well (MQW) internal quantum efficiency (IQE) Arrhenius formula 

摘      要：Blue InGaN multiple-quantum-well (MQW) samples with different InxGa1-xN (x=0.01-0.04) underneath layers (ULs) were grown by metal organic vapor phase epitaxy (MOVPE). Temperature dependent photoluminescence showed that the InGaN UL can improve the internal quantum efficiency (IQE) of MQW effectively due to strain release. And a maximum IQE of 50% was obtained when the thickness and In content of the InGaN UL were 60 nm and 0.01, respectively. Furthermore, the larger In content or thickness of the InGaN UL makes the IQE lower. Arrhenius fit to the experiment data showed that the IQE fall was mainly caused by the quantity increase of the nonradiative recombination centers, which was believed related to the accumulated stress in InGaN ULs.