Effect of substrate bias on microstructure and tribological performance of GLC films using hybrid HIPIMS technique

作     者：ZHANG Xue-qian KE Pei-ling WANG Ai-ying HUANG Mei-dong Kwang Ho KIM 

作者机构：Ningbo Key Laboratory of Marine Protection MaterialsNingbo Institute of Materials Technology and EngineeringChinese Academy of Sciences College of Physics and Electronic InformationTianjin Normal University National Core Research Center for Hybrid Materials SolutionPusan National University 

出 版 物：《中国有色金属学会会刊：英文版》 (Transactions of Nonferrous Metals Society of China)

年 卷 期：2012年第22卷第S3期

页      面：740-744页

核心收录：

学科分类：07[理学] 0806[工学-冶金工程] 070205[理学-凝聚态物理] 08[工学] 0818[工学-地质资源与地质工程] 0815[工学-水利工程] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0813[工学-建筑学] 0703[理学-化学] 0814[工学-土木工程] 0702[理学-物理学] 

基　　金：Project(51005226)supported by the Natural Science Foundation of China Project(2010A610161)supported by the Natural Science Foundation of Ningbo Government,China Project(2010D10015)supported by the International Cooperation Foundation of Ningbo Government,China 

主　　题：graphite-like carbon high power impulse magnetron sputtering substrate bias microstructure tribological behavior 

摘      要：The Cr-doped hydrogen-GLC films were prepared by a hybrid magnetron sputtering system composed of a direct current magnetron sputtering (DC-MS) source of carbon and a high power impulse magnetron sputtering (HIPIMS) source of Cr with reactive gas of *** hydrogen-free GLC and Cr-doped GLC films were also prepared for *** influence of substrate bias on the Cr-doped hydrogen-GLC films was *** the increase of substrate bias from 100 V to 250 V,the re-sputtering of weak bonding sp2 firstly occurred and induced an increased sp3 ***,the following sp3 to sp2 transformation resulted in a decreased sp3 *** change trends of surface roughness and friction coefficient with the increased bias voltages were the same as those of sp3 *** lowest surface roughness and lowest friction coefficient corresponded to the highest sp3 with the Cr-GLC-H films at the bias voltage of-100 V.