Charge Transport and Electrical Properties in Poly(3-hexylthiophene) Polymer Layers

作     者：WANG Li-Guo ZHANG Huai-Wu TANG Xiao-Li LI Yuan-Xun ZHONG Zhi-Yong 王立国;张怀武;唐晓莉;李元勋;钟智勇

作者机构：State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu 610054 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2012年第29卷第1期

页      面：216-219页

核心收录：

学科分类：0808[工学-电气工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 

基　　金：Supported by the National Basic Research Program of China under Grant No 2007CB310407 the Foundation for Innovative Research Groups of the National Natural Science Foundation of China under Grant No 61021061 the National Natural Science Foundation of China under Grant Nos 50972023,61001025,and 61071028 the International S&T Cooperation Program of China under Grant No 2006DFA53410 

主　　题：charge Electrical electrical 

摘      要：A systematic study of the charge transport and electrical properties in poly(3-hexylthiophene) (P3HT) polymer layers is *** demonstrate that the temperature-dependent current-voltage J (V,T) characteristics of hole-only devices based on P3HT can be accurately described using the recently introduced extended Gaussian disorder model (EGDM).A particular numerical method adopting the uneven discretization and Newton iteration method is used to solve the coupled equations describing the space-charge limited (SCL) current in conjugated *** the polymer studied,we find the width of the density of states σ =0.1 eV and the lattice constant a =*** on the numerical method and EGDM,we further calculate and analyze some important electrical properties for P3HT in detail,including the variation of current-voltage characteristics with the boundary carrier density and the distribution of charge-carrier density and electric field with the distance from interface.