Growth of SiO_2 nanowires on different substrates using Au as a catalyst

作     者：李玉国 杨爱春 卓博世 彭瑞芹 郑学垒 

作者机构：Semiconductor InstituteCollege of Physics and ElectronicsShandong Normal University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2011年第32卷第2期

页      面：19-22页

核心收录：

学科分类：0808[工学-电气工程] 07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 070205[理学-凝聚态物理] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：National Institutes of Health  NIH: DP1GM105379 

主　　题：SiO2 nanowires substrate mechanism 

摘      要：SiO2 nanowires were prepared on a SiO2/Si（111） or Si substrate using Au as a catalyst. The products were characterized using scanning electron microscopy （SEM） and X-ray photoelectron spectroscopy （XPS）. SEM shows that large amounts of SiO2 nanowires with a diameter of 20-150 nm and length of several nanometers were formed on the entire surface of the substrate. XPS analysis indicates that the nanowires have the composition of Si and O in an atomic ratio of about 1 ： 2, and their composition approximates that of SiO2. The formation of the SiO2 nanowires was controlled by the vapor-liquid-solid mechanism. It is found that the annealing time affects the morphology of the products. Finally, the effect of the substrates on the growth of SiO2 nanowires was discussed. The Si source of the SiO2 nanowires comes from the substrate or Si powder for different substrates.