Electron trapping properties at HfO_2/SiO_2 interface, studied by Kelvin probe force microscopy and theoretical analysis

作     者：张满红 

作者机构：School of Electrical and Electronic Engineering North China Electric Power University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2016年第25卷第8期

页      面：384-387页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0803[工学-光学工程] 

基　　金：supported by the National Natural Science Foundation of China(Grant No.61176080) 

主　　题：Kelvin probe force microscopy traps diffusion coefficient activation energy 

摘      要：Electron trapping properties at the HfO2/SiO2 interface have been measured through Kelvin Probe force microscopy,between room temperature and 90 ℃.The electron diffusion in HfO2 shows a multiple-step *** injection,electrons diffuse quickly toward the HfO2/SiO2 interface and then diffuse laterally near the interface in two sub-steps：The first is a fast diffusion through shallow trap centers and the second is a slow diffusion through deep trap *** of contact potential difference profile in the fast lateral diffusion sub-step was simulated by solving a diffusion equation with a term describing the charge *** this way,the diffusion coefficient and the average life time at different temperatures were extracted.A value of 0.57 eV was calculated for the activation energy of the shallow trap centers in HfO2.