Chemical Mechanical Polishing of Ge_(2)Sb_(2)Te_(5) Using Abrasive-Free Solutions of Iron Trichloride

作     者：YAN Wei-Xia WANG Liang-Yong ZHANG Ze-Fang HE Ao-Dong ZHONG Min LIU Wei-Li WU Liang-Cai SONG Zhi-Tang 闫未霞;王良咏;张泽芳;何敖东;钟旻;刘卫丽;吴良才;宋志棠

作者机构：State Key Laboratory of Functional Materials for InformaticsLaboratory of NanotechnologyShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2012年第29卷第3期

页      面：243-246页

核心收录：

学科分类：07[理学] 0701[理学-数学] 070101[理学-基础数学] 

基　　金：Supported by the National Integrate Circuit Research Program of China(2011ZX02704-002,2009ZX02030-001) Science and Technology Council of Shanghai(0952nm00200,10QB1403600) Visiting Professorship for Senior International Scientists of Chinese Academy of Sciences 

主　　题：spectroscopy resistivity verified 

摘      要：Chemical mechanical polishing(CMP)of amorphous Ge_(2)Sb_(2)Te_(5)(GST)is studied using aqueous solutions of iron trichloride(FeCl_(3))as possible abrasive-free *** polishing performance of abrasive-free solutions is compared with abrasive-containing(3wt% colloidal silica)slurry in terms of polishing rate and surface *** experimental results indicate that the abrasive-free solutions have a higher polishing rate and better surface *** order to further investigate the polishing mechanism,post-CMP GST films using the abrasive-free solutions and abrasive-containing slurry are characterized by x-ray photoelectron ***,it is verified that the abrasive-free solutions have no influence on the electrical property of the post-CMP GST films through the resistivity test.