Photo-Induced Electron Spin Polarization in a Narrow Band Gap Semiconductor Nanostructure

作     者：A.John Peter Chang Woo Lee 

作者机构：Department of Chemical Engineering and Green Energy CenterCollege of EngineeringKyung Hee University1 SeochunGihungYonginGyeonggi 446-701S.Korea 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2012年第29卷第11期

页      面：186-190页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

基　　金：Supported by the CSIR India under Grant No 03(1159)/10/EMR-II 

主　　题：polarization resonant photon 

摘      要：Photo-induced spin dependent electron transmission through a narrow gap InSb/InGa_(x)Sb_(1-x) semiconductor symmetric well is theoretically studied using transfer matrix *** transparency of electron transmission is calculated as a function of electron energy for different concentrations of *** spin-polarized photon assisted resonant tunnelling in the heterostructure due to Dresselhaus and Rashba spin-orbit coupling induced splitting of the resonant level and compressed spin-polarization are *** results show that Dresselhaus spin-orbit coupling is dominant for the photon effect and the computed polarization efficiency increases with the photon effect and the gallium concentration.