Strain effects on optical polarisation properties in (11■2) plane GaN films

作     者：郝国栋 陈涌海 范亚明 黄晓辉 王怀兵 

作者机构：Nano-Devices and Materials DivisionSuzhou Institute of Nano-tech and Nano-bionicsChinese Academy of Sciences Key Laboratory of Semiconductor Materials ScienceInstitute of SemiconductorsChinese Academy of Sciences 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2010年第19卷第11期

页      面：542-547页

核心收录：

学科分类：08[工学] 0803[工学-光学工程] 

基　　金：Project supported by the National Basic Research Program of China (Grant Nos. 2006CB604908 and 2006CB921607) the National Natural Science Foundation of China (Grant Nos. 60625402,60990313 and 60990311) 

主　　题：GaN (11-22)-plane strain optical anisotropy 

摘      要：We present the theoretical results of the electronic band structure of wurtzite GaN films under biaxial strains in the （11^-22）-plane. The calculations are performed by the k.p perturbation theory approach through using the effectivemass Hamiltonian for an arbitrary direction. The results show that the transition energies decrease with the biaxial strains changing from -0.5% to 0.5%. For films of （11^-22）-plane, the strains are expected to be anisotropic in the growth plane. Such anisotropic strains give rise to valence band mixing which results in dramatic change in optical polarisation property. The strain can also result in optical polarisation switching phenomena. Finally, we discuss the applications of these properties to the （1132） plane GaN-based light-emitting diode and lase diode.