A COMPREHENSIVE INVESTIGATION ON A PECULIAR DEFECT IN WURTZITE GaN FILM

作     者：S.Q.Wang1 ,2) and H.Q.Ye1) 1) Laboratory of Atomic Imaging of Solids,Institute of Metal Research , The Chinese Academy of Sciences, Shenyang 110015 ,China 2)Department of Materials Science and Metallurgy , University of Cambridge, Cambridge CB2 3QZ, UK 

出 版 物：《Acta Metallurgica Sinica(English Letters)》 (金属学报（英文版）)

年 卷 期：1999年第12卷第4期

页      面：327-333页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

主　　题：HREM weak beam electron microscopy crystal defect Wurtzite GaN molecular dynamics 

摘      要：Apeculiar crystal defect was observed by experiment of high resolution electron microscopy( HREM) .It wasidentifiedtoformed bytwothreading dislocationsand asegmentof(11 20) domain boundary. An atomicstructure model was proposed for the anomalous defect. Theresultofthe weak beam experimentofelectron microscopeaffirmedthesuggested *** GaN(11 2 0) domain boundaries werestudied by Molec ular Dynamicscalculations. Thetheoreticalresultsshowedthatthelike atom bonding domain boundary, whichcomposesthe main partofthe peculiar defect, has much higher formationenergy than itcounterpartof unlike atom bonding domain boundary. Theoutcome providesanotherevidenceforthesuggested model.