A Q-band CMOS LNA exploiting transformer feedback and noise-cancelling

作     者：WU Jing JIANG ZhengDong YI Kai KANG Kai YU YiMing CHEN JiXin ZHANG Lei LIU Jun LI Le-Wei Joshua 

作者机构：School of Economic Information Engineering Southwestern University of Finance and Economics School of Electronic Engineering University of Electronic Science and Technology of China State Key Laboratory of Millimeter Waves Southeast University Institute of Microelectronics Tsinghua University Key Laboratory of RF Circuits and Systems Hangzhou Dianzi University School of Engineering Monash University 

出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))

年 卷 期：2015年第58卷第4期

页      面：148-157页

核心收录：

学科分类：0810[工学-信息与通信工程] 0808[工学-电气工程] 080902[工学-电路与系统] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 61101037, 61422104, and 61331006) the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2013ZX03001011) 

主　　题：CMOS low noise amplifier Q-band transformer feedback noise cancelling millimeter wave 

摘      要：In this paper, a Q-band CMOS low noise amplifier(LNA) exploiting transformer positive-negative feedback and noise cancelling is presented. The proposed low noise amplifier consists of a positive transformer feedback to achieve noise-reduction and a negative transformer feedback to obtain high reverse isolation and stability. The noise cancellation technique is applied in this LNA to achieve a low noise figure. This LNA has been fabricated by standard commercial 90 nm CMOS. According to measurements, this proposed LNA achieves a peak gain of 11.5 d B, a noise figure of 6.5 d B and an input P1 d B of-12 d Bm. It consumes 11.5 m A from a1.2 V supply occupying the area of 0.6×0.7 mm2.