Shot Noise Suppression in a Quantum Point Contact with Short Channel Length
Shot Noise Suppression in a Quantum Point Contact with Short Channel Length作者机构:Department of Applied PhysicsHanyang University
出 版 物:《Chinese Physics Letters》 (中国物理快报(英文版))
年 卷 期:2015年第32卷第7期
页 面:164-167页
核心收录:
学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学]
主 题:length Shot Noise Suppression in a Quantum Point Contact with Short Channel Length
摘 要:An experimental study on the current shot noise of a quantum point contact with short channel length is reported. The experimentally measured maximum energy level spacing between the ground and the first excited state of the device reached up to 7.5meV, probably due to the hard wall confinement by using shallow electron gas and sharp point contact geometry. The two-dimensionM non-equilibrium shot noise contour map shows noise suppression characteristics in a wide range of bias voltage. Fano factor analysis indicates spin-polarized transport through a short quantum point contact.