MICROSTRUCTURE OF SILICON CARBIDE WHISKERS
MICROSTRUCTURE OF SILICON CARBIDE WHISKERS作者机构:Central Iron and Steel Research Inst Beijing China
出 版 物:《Acta Metallurgica Sinica(English Letters)》 (金属学报(英文版))
年 卷 期:1991年第4卷第9期
页 面:211-218页
核心收录:
学科分类:08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)]
主 题:SiC whisker microstructure defect
摘 要:The morphology,crystal defects and chemical compositions of surfaces in two kinds of SiC whiskers related to their growth mechanism have been studied by means of electron microscopy and surface chemical *** upon the experimental results,five criteria for evaluating the whisker microstructure were suggested as:proportion of the perfect single crystals,morphology and dimensions,defects and their distribution,the bulk and surface chemistries,and crystallographic characteristics.