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MICROSTRUCTURE OF SILICON CARBIDE WHISKERS

MICROSTRUCTURE OF SILICON CARBIDE WHISKERS

作     者:XU Haigang ZHU Jing YUAN Hong Central Iron and Steel Research Institute,Ministry of Metallurgical Industry,Beijing,ChinaNING Xiaoguang YE Hengqiang Laboratory of Atomic Imaging of Solids,Institute of Metal Research,Academia Sinica,Shenyang,China 

作者机构:Central Iron and Steel Research Inst Beijing China 

出 版 物:《Acta Metallurgica Sinica(English Letters)》 (金属学报(英文版))

年 卷 期:1991年第4卷第9期

页      面:211-218页

核心收录:

学科分类:0810[工学-信息与通信工程] 08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0812[工学-计算机科学与技术(可授工学、理学学位)] 

主  题:SiC whisker microstructure defect 

摘      要:The morphology,crystal defects and chemical compositions of surfaces in two kinds of SiC whiskers related to their growth mechanism have been studied by means of electron microscopy and surface chemical *** upon the experimental results,five criteria for evaluating the whisker microstructure were suggested as:proportion of the perfect single crystals,morphology and dimensions,defects and their distribution,the bulk and surface chemistries,and crystallographic characteristics.

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