Inhibition of Electromigration in Eutectic SnBi Solder Interconnect by Plastic Prestraining

作     者：X.F. Zhang H.Y. Liu J.D. Guo J.K. Shang 

作者机构：Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang 110016 China Department of Materials Science and Engineering University of Illinois at Urbana-Champaign. Urbana. IL 61801. USA 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2011年第27卷第11期

页      面：1072-1076页

核心收录：

学科分类：08[工学] 

基　　金：supported by the National Natural Science Foundation of China (Grant No. 51171191) the National Basic Research Program of China (Grant No. 2010CB631006) the Natural Science Foundation of Liaoning Province, China (Grant No. 20092076) 

主　　题：Electromigration Interfacial segregation Prestrain Dislocation Vacancy 

摘      要：Plastic prestraining was applied to a solder interconnect to introduce internal defects such as dislocations in order to investigate the interaction of dislocations with electromigration damage. Above a critical prestrain, Bi interfacial segregation to the anode, a clear indication of electromigration damage in SnBi solder inter- connect, was effectively prevented. Such an inhibiting effect is apparently contrary to the common notion that dislocations often act as fast diffusion paths. It is suggested that the dislocations introduced by plastic prestraining acted as sinks for vacancies in the early stage of the electromigration process, but as the vacancies accumulated at the dislocations, climb of those dislocations prompted recovery of the deformed samples under current stressing, greatly decreasing the density of dislocation and vacancy in the solder, leading to slower diffusion of Bi atoms.